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    2003 Mar 25 3 NXP Semiconductors Product data sheet Low-voltage stabistor BAS17 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on a FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 580 ? 660 mV IF = 1 mA 665 ? 745 mV IF = 5 mA 725 ? 805 mV IF = 10 mA 750 ? 830 mV IF = 100 mA 870 ? 960 mV IR reverse current VR = 4 V ? ? 5 μA rdif differential resistance IF = 0.5 mA ? 120 ? ? IF = 2 mA ? 80 ? ? SF temperature coefficient IF = 1 mA ? ?1.8 ? mV/K Cd diode capacitance VR = 0 V; f = 1 MHz ? ? 140 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 330 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W |